Nanoimprint lithography becomes a hot focus of novel lithography technologies of next generation due to its advantages of low cost, high yield and fidelity of large area pattern transfer.
纳米压印光刻技术具有效率高、失真率低、易于实现大面积图形转移等特点，成为下一代光刻技术的研究热点。
For the removal of residual layer after template is released during nanoimprint lithography, a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.
针对纳米压印光刻技术中压印脱模后的留膜去除问题，提出了一种基于光刻版的无留膜紫外纳米压印技术。
Nanoimprint, as a non-optical lithography technology , has demonstrated its ability for semiconductor manufacturing by offering resolution below sub-10nm feature size, high throughput and low cost.
纳米压印作为非光学的下一代光刻技术，具有分辨率高、成本低、产率高等诸多优点，因而可能应用于将来的半导体制造中。
Nanoimprint, as a non-optical lithography technology , has demonstrated its ability for semiconductor manufacturing by offering resolution below sub-10nm feature size, high throughput and low cost.
纳米压印作为非光学的下一代光刻技术，具有分辨率高、成本低、产率高等诸多优点，因而可能应用于将来的半导体制造中。
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