• What strikes me as paradoxical is that, notwithstanding this negative bias, we as a society remain fascinated by the gilded life.

    但我发现吊诡的是,尽管有负面的偏见,我们这个社会仍然着迷于镀金的生活。

    youdao

  • This is the resistor on which the negative bias is developed.

    这是在其上面产生负偏压的电阻器。

    youdao

  • The film component phase is dependent primarily on the negative bias of substrate.

    膜的相组成主要是基板负偏压所决定的。

    youdao

  • The mechanism of negative bias enhanced diamond nucleation is emphatically analyzed.

    着重分析了负衬底偏压增强金刚石核化的机制。

    youdao

  • Ions sputtering could lead to the decrease of the thickness when the substrate negative bias voltage increases excessively.

    负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。

    youdao

  • The effect of Al content, direct current negative bias and post treatment on the friction coefficient of the films was studied.

    在此基础上讨论铝含量、直流偏压及后期处理对薄膜摩擦系数的影响。

    youdao

  • The newly CUK controller realizes a kind of high efficiency, low cost and very low output voltage ripple negative bias voltage design.

    介绍的新型CUK型变换器,旨在实现一种高效、低成本、输出电压纹波极低的负偏压设计方案。

    youdao

  • However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.

    当负偏压超过200V后,由于薄膜中石墨相增多,薄膜表面粗糙度将增大。

    youdao

  • This paper mainly deals with the relationship between negative bias of substrate and component phases of magnetron-sputtering ion plated aluminium film of A3 steel.

    本文主要论述基板负偏压与A 3钢基体磁控溅射离子镀铝膜相组成的关系。

    youdao

  • The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.

    在微波等离子体化学气相沉积金刚石膜时,采用负偏压使氢和硼离子轰击金刚石膜表面。

    youdao

  • Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.

    采用过滤阴极真空电弧技术并施加一定的衬底负偏压,在P(100)单晶硅片上制备出四面体非晶碳薄膜。

    youdao

  • Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.

    采用过滤阴极真空电弧技术并施加一定的衬底负偏压,在P(100)单晶硅片上制备出四面体非晶碳薄膜。

    youdao

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