The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
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