NOR flash memory can typically be programmed a byte at a time, whereas NAND flash memory must be programmed in multi-byte bursts (typically, 512 bytes).
NOR flash内存通常一次可以编写一个字节，而NAND flash内存必须编写多个字节(通常为512字节)。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
In a NOR device, each block in the flash memory can be erased up to 100,000 times. NAND flash memories can be erased up to one million times.
在NOR设备中，flash内存中的每个块可被擦除100,000次，而在NAND flash内存中可达到一百万次。
However, many other types of memory are RAM as well (ie, Random Access memory), including most types of ROM and a kind of flash memory called NOR-Flash.
然而，许多其他类型的内存以及内存(即随机存取记忆体)，其中包括大多数类型的ROM和一种所谓的NOR快闪记忆体闪光。
However, many other types of memory are RAM as well (ie, Random Access memory), including most types of ROM and a kind of flash memory called NOR-Flash.
然而，许多其他类型的内存以及内存(即随机存取记忆体)，其中包括大多数类型的ROM和一种所谓的NOR快闪记忆体闪光。
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