A method of manufacturing a metal oxide semiconductor (500).
一种制造金属氧化物半导体的方法(500)。
A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor.
或者，本发明的另一个目的在于提供一种使用该氧化物半导体的半导体装置。
The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.
主要讨论NTC多晶氧化物半导体中晶界对电导的影响。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
ZnO nanoparticle is an important oxide semiconductor material, which is of potential applications in many areas.
纳米氧化锌颗粒是重要的氧化物半导体材料，具有广泛的应用范围。
Abstract: Phthalocyanine and oxide semiconductor sensitive materials used for NO2 sensors in recent ten year are described.
文摘：描述了近十年来用作NO2气体传感器的酞菁类和氧化物半导体敏感材料。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.
因此，对氧化物半导体层（905）引入比氧化物半导体层（906）更高浓度的氢。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
Oxide semiconductor ceramics are new thermoelectric materials used at mid_or high_temperature for potential application in power generation from waste heat.
氧化物半导体陶瓷材料是新型的中、高温热电材料。
The electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.
电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低 成本。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
The invention belongs to the field of oxide semiconductor film materials, and in particular relates to a zinc oxide and titanium dioxide composite film material and a preparation method thereof.
本发明属于氧化物半导体薄膜材料领域，特别涉及氧化锌与二氧化钛复合薄膜材料及其制备方法。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
The main contents of my graduate thesis, focusing on the synthesis of oxide and nitride semiconductor nanostructures through CVD, are summarized as:1.
基于以上原因，本论文的工作将主要建立在使用化学气相沉积法制备氮化物和氧化物半导体纳米材料的基础上。
The main contents of my graduate thesis, focusing on the synthesis of oxide and nitride semiconductor nanostructures through CVD, are summarized as:1.
基于以上原因，本论文的工作将主要建立在使用化学气相沉积法制备氮化物和氧化物半导体纳米材料的基础上。
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