Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.
氮化硅、二氧化硅双层透明膜可用作硅PIN光电探测器抗反射膜。
It is shown that choosing LM317 to be the manostat, the PIN diodes to be the photodetector, and the I-V transformation to be the connective mode, the designing index can be fulfilled.
测试结果表明：选择LM 317作稳压器，PIN光电二极管作探测器，采用I V光电转换连接光电探测器与放大器的方式，可以满足设计要求。
It is shown that choosing LM317 to be the manostat, the PIN diodes to be the photodetector, and the I-V transformation to be the connective mode, the designing index can be fulfilled.
测试结果表明：选择LM 317作稳压器，PIN光电二极管作探测器，采用I V光电转换连接光电探测器与放大器的方式，可以满足设计要求。
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