The additional upper state is created by a first quantum well adjacent to the injection barrier.
新增高能态是通过注入式势垒旁第一个量子阱来创建的。
The polaron effects on excitons in a parabolic quantum well are studied.
研究了抛物阱中极化子效应对激子的影响。
The rate equations for multi quantum well VCSELs are deduced theoretically;
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
Modify quantum well structure can decrease threshold current and increase power.
重点设计了量子阱结构来降低阈值电流，提高输出光功率。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting.
平面雷射：双异质结构，量子井，多重电极，面发射。
In this paper, the chirping characteristics of quantum well laser diodes under small signal modulation are studied.
文中对小信号调制下单量子阱激光器的啁啾特性进行了研究和分析。
Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported.
报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性。
The numerical results show that the interactions of the interface phonon and an electron in quantum well are not ignorable.
数值计算结果表明，量子阱中界面声子与电子的相互作用是不可忽略的。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
本文报道了以混合应变量子阱结构为有源区的激光器。
The transfer matrix and transmission coefficient through a parabolic quantum well are obtained by solving schrodinger equation .
文中通过求解薛定谔方程得到抛物形量子阱的变换矩阵与透射系数。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
This paper presents a simulative method to solve the frequency response of single quantum well laser diode under small signal modulation.
文中运用三层速率模型，对小信号调制下单量子阱激光器的频率响应进行模拟分析。
The multi valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.
介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。
The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Achieving the energy level position in quantum Wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters.
量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.
提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。
The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.
本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE.
给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。
In this paper, we have deduced the TM mode dispersion equations of the multi-channel waveguide and the multi-quantum well optical waveguides by using this method.
该文利用转移矩阵方法导出了多沟道波导和多量子阱波导的TM模式色散方程。
At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。
In this paper, the theoretical design for the quantum well lasers with vertically integrated passive waveguides, which decreases the vertical beam divergence effectively, are reported.
报道了一种具有垂直集成无源波导的耦合波导结构量子阱激光器的理论设计，它可以使垂直结平面方向的远场光束发散角得到有效的降低。
In this paper, theoretical calculation is performed for the mechanism by which the electron-phonon interaction exerts influence on third-harmonic generation in a parabolic quantum well.
本文就电子一声子相互作用对抛物量子阱中三次谐波产生的影响机制作了理论计算。
In this paper, theoretical calculation is performed for the mechanism by which the electron-phonon interaction exerts influence on third-harmonic generation in a parabolic quantum well.
本文就电子一声子相互作用对抛物量子阱中三次谐波产生的影响机制作了理论计算。
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