High dielectric constant thin films have been used in high-density dynamic random access memories widely.
高介电常数薄膜广泛应用于动态随机存储器中。
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Ferroelectric fatigue is much fatal for the electric apparatus based on the switchable polarization, such as non-volatile random access memories (NVFRAM).
铁电材料的疲劳特性是影响依赖可反转极化工作的电子器件性能的关键，例如非易失性铁电存储器。
Ferroelectric fatigue is much fatal for the electric apparatus based on the switchable polarization, such as non-volatile random access memories (NVFRAM).
铁电材料的疲劳特性是影响依赖可反转极化工作的电子器件性能的关键，例如非易失性铁电存储器。
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