The result is the Torrent chip, a semiconductor device that analyses genomes.
这一想法导致了Torrent芯片，一种可分析基因的半导体的诞生。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
The semiconductor device (10) is made over a semiconductor layer (12).
半导体器件（10）被制造在半导体层（12）上。
The invention provides a method for manufacturing semiconductor device.
本发明提供制造半导体装置的方法。
The invention relates to a manufacturing method of semiconductor device.
本发明涉及一种半导体器件的制造方法。
Disclosed are a semiconductor device and a manufacturing method thereof.
本发明公开了一种半导体器件及其制造方法。
It is a kind of storage device using semiconductor device as storage medium.
它是一种以半导体芯片作为存储介质的存储器。
Optical disk device, semiconductor device, optical disk and recording method.
光盘装置，半导体器件，光盘及记录方法。
The invention relates to a semiconductor device having a single-ended sensing amplifier.
本发明涉及具有单端读出放大器的半导体器件。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method.
丝焊方法，半导体器件，丝焊的毛细管及球块形成方法。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device.
多孔膜形成用组合物，该组合物的制备方法，多孔膜及半导体装置。
One aspect of the present invention is a method of forming a semiconductor device having copper metallization.
本发明的一个方面是形成具有铜金属化的半导体器件的方法。
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
This invention provides a film forming method, a film forming device, a storage medium and a semiconductor device.
本发明提供成膜方法、成膜装置、存储介质以及半导体装置。
A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion.
本发明提供一种用于测试包含数字部分(310)和模拟部分(320)两者的半导体装置的方法。
The leadless packaging structure reduces the packaging size of the semiconductor device and reduces the product cost.
本发明缩小了半导体器件的封装尺寸，降低了产品成本。
Silicone resin modified polyester(SP) is a kind of ultra-pure surface protection material used in semiconductor device.
聚酯改性硅漆（SP）是用于硅器件表面保护的高纯绝缘材料。
Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate.
电压测量方法，电测试方法和装置，半导体器件制造方法和器件衬底制造方法。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same.
绝缘膜用材料，绝缘膜用罩光清漆，以及绝缘膜和采用该膜或该清漆的半导体装置。
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
A memory cell and a data line are controlled with a reset signal, so that data can be reliably outputted in the semiconductor device.
存储单元和数据线用复位信号来控制，以使数据可在该半导体器件中被可靠地输出。
A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property.
一种横向dmos器件，具有防止半导体器件击穿同时增强击穿电压性能的结构。
Semiconductor device, card, system, and methods of initializing and checking the authenticity and the identify of the semiconductor device.
半导体器件，卡，系统以及初始化和检验半导体器件的真实性和身份的方法。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
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