The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
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