In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.
本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。
In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.
本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。
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