Modify quantum well structure can decrease threshold current and increase power.
重点设计了量子阱结构来降低阈值电流，提高输出光功率。
The linear dependences of the threshold current and the maximum current on DC clearing ion voltage are also presented.
提出了适于此类清洗电极的直流清除离子电压与积累束流阈值流强、最高流强的线性关系。
The mode and the threshold current characteristics of planar stripe geometry DH lasers can be analyzed by two-dimensional waveguide model.
平面条形双异质结激光器的模式和阈值电流特性可以用两维波导模型来分析。
The effects of device temperature on the laser threshold current, external differential quantum efficiency (DQE), and output wavelength are also investigated.
研究了器件温度对于激光阈值电流、外微分量子效率和输出波长的影响。
The effects of DBR reflectivity and well Numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure.
分析了腔镜反射率、量子阱数等参数对阈值电流、输出光功率的影响，并根据理论计算对器件参数进行了优化设计。
We can monitor many parameters and characteristics by measuring TEN, such as surge frequency, spectrum width, threshold current, mode jump and stability of output light power.
通过对激光的电噪声的测量可以监测激光器的诸多参数和特性，如弛豫频率，谱线宽度，阈值电流，模式跳变及输出光功率是否稳定等。
The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.
研究了氧化孔径对阈值电流和微分电阻的影响，结果表明较小的氧化孔径可以获得低的阈值电流。
While AlAs oxide confined aperture may reduce the threshold current of vertical-cavity surface emitting lasers (VCSELs), it might also enlarge the series resistance of the VCSELs.
含氧化限制孔的VCSEL具有低的阈值电流，但氧化孔的存在也会加大串联电阻。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
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