The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.
2
共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
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数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.