The effect of resonant-tunnelling appears in the structure.
2
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
3
通过计算应变多量子阱中的净应力和应变弛豫，讨论了激光器结构中应变多量子阱的稳定性。
In this paper, the stability of strained MQWs in laser structure is discussed in terms of the calculation of net stress and strain relaxation.
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