Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
3
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.