The successor heater can be used to supply the radial heat dissipation, and the melt to crystal heat flow is balanced by this process, so that the crystal growth interface became more flatted.

The die is heated with electrical resistance cartridge heaters placed in hole drilled in placement areas selected to avoid localized hot spots, which would affect melt flow uniformity.

High/low voltage switch, Exhausting overheat protect, anti-freezing temperature controller.