A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers, and the main contamination was gallium arsenide particles in suspension.
The company said that three - and four-inch material accounted for 70 percent of the GaAs wafer output in 2007 and the market for larger diameter material will continue through 2012.
3
为了获得高质量半绝缘砷化镓单晶片,有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.