【豆丁-热门】-离子注入技术现状与发展趋势 - docin.com豆丁网 极与漏极接合面的耗尽宽度(depletion widths)，尺寸收缩会造成许多影响晶体管漏电流与 效能的短沟道效应(short channel effects, SCE)。对于 未来的32 纳米与22 nm 技术节点，离子注入制程具 有独特的优势，能借着损伤工程的应用(
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使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
藉由本发明可以在维持元件密度的情况下制作较宽的字线，避免短沟道效应，提升元件的效能。
Applying the patterning method can manufacture a wider word line under the condition of maintaining an element density, avoid a short-channel effect and improve the efficiency of the element.
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