donor impurity level 施主杂质能级
donor impurity state 施主杂质态
donor impurity states 施主杂质态
shallow-donor impurity 浅施主杂质
shallow donor impurity 浅施主杂质
negative donor impurity 负施主杂质
hydrogenic donor impurity 类氢施主杂质
hydrogenic-donor impurity 类氢杂质
anisotropic donor impurity 各向异性施主杂质
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The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数,它还随杂质位置,外电场强度发生变化。
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