Coulomb blockade 库仑阻塞 ; 单电子晶体管
coulomb blockade effect 库仑阻塞效应 ; 库伦阻塞效应
Coulomb blockade effects 库仑阻塞效应
coulomb blockade and electron tunneling coulomb阻塞及电子隧穿
coulomb blockade model 库仑阻塞模型
Coulomb blockade oscillation 库仑阻塞振荡
Some typical effects including weak localization effect, universal conductance fluctuations, coulomb blockade effect, Ahoronov-Bolm effect, and integer and fractional quantum Hall effect have been introduced briefly in Chapter 1.
第一章简单介绍了介观物理中的几个典型效应，包括弱局域化效应、普适电导涨落、库仑阻塞效应、Aharonov-Bolm效应、整数及分数量子霍尔效应等。
参考来源 - 单载流子在耦合量子点体系中的动力学特性·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
Thus, confinement effects modify electron energy levels, similar to a particle in a box, whereby Coulomb blockade effect arises as a consequence of the discrete nature of electric charges.
因此，限制效应改变了电子能水平，就好像一个装在盒子中的颗粒，这就是为什么电荷的离散特性会导致库仑阻塞效应的原因。
This paper looks back to the studied history of the SEDs briefly and discusses some effects, such as coulomb blockade, which are basic of SED design.
本文对这一工作进行了较全面的回顾，同时也讨论了库仑抑制等基本效应，这是此类器件的设计基础。
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