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The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
随着周围2.5 V的栅极电压(最低),输出功率和漏电流增加了很多。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
沟道掺杂浓度提高,同样的界面态密度造成的漏极特性漂移增大。
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