The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage.
结果表明电子平均漂移速度决定于阴极 杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。
参考来源 - 磁绝缘线振荡器的研究·2,447,543篇论文数据,部分数据来源于NoteExpress
以上来源于: WordNet
Finally, the static and transient variation of electron drift velocity in high electric fields are studied.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described.
介绍了研究集成电路互连线电迁移的两种方法:加速寿命试验和移动速度试验。
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