The results show that formation of the precursor radicals and the growth mechanism in ICP-CVD with high electron density are different from those in conventional CVD with low electron density.
实验结果预示着在高电子密度的ICP CVD过程中，活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。
To meet the needs of high electron current density photocathodes, the processes for preparing cesium antimonide have been studied.
为满足大电流密度电子发射的需要，对锑铯光电阴极的制备工艺进行了研究。
The result indicates that, in high density, the influence of electron screening on electron capture is obvious.
表明在高密情况下电荷屏蔽对电子俘获率的影响是明显的。
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