其中,新型非挥发铁电存储器(Ferroelectric Random Access Memories,FeRAM)与传统的EEPROM和FLASH非挥发存储器相比,具有操作电压低、功耗低、信息保持时间长、写操作速度...
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Due to the excellent endurance properties against polarization switching, low coercive field and fast switching time, bismuth layer-structured ferroelectrics (BLSFs) have great potential in ferroelectric random access memories.
铋层状材料具有优良的铁电性能如抗疲劳特性、低的极化反转电压和快的反转时间,能很好达到铁电存储器的要求而成为FRAM最佳候选材料。
参考来源 - 铋层状结构铁电材料组成设计与性能优化·2,447,543篇论文数据,部分数据来源于NoteExpress
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