The dependence of oxygen precipitation and induced-defects in heavily As-doped silicon on heat treatment process was studied by annealing and IG process, chemical etching, scanning electron micrograph (SEM) and transmission electron microscopy(TEM).
本文通过化学腐蚀、光学显微镜、扫描电镜(SEM)、透射电境(TEM)等分析技术，对重掺砷硅单晶在单步退火工艺和内吸杂退火工艺中氧沉淀及诱生缺陷的形态，形核与热处理温度、时间的关系等进行了研究。
参考来源 - 重掺砷硅单晶中氧沉淀及诱生缺陷的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
A developed IG technique was suggested and the mechanism of the influence of As on oxygen precipitation formation in heavily As-doped silicon was discussed.
探索出一种改进的内吸除技术，并探讨了其增强重掺硅片中氧沉淀的机理。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
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