• 高频c-v - 引用次数：2

  In this paper, the high frequency C-V, the annihilation of slow positron beam and the infrared reflectance techniques were used to study the property of interface in SiO2/SiC, the defects in SiO2 and their physical characteristics.

  本文运用高频C-V、慢正电子淹没和红外反射谱的方法，分别研究SiO_2／SiC系统的界面特性、表面氧化层缺陷情况和氧化层物理特性。

  参考来源 - SiO

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