It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.

发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。

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It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.

发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。

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