研究人员使用 砷化铟 ( indium arsenide )制成的奈米线,因为它与金属之间不会形成萧特基障壁(Schottky barrier),电子可以很容易穿透奈米线与超导电极间的介面,而这也是产...
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indium arsenide detector 砷化铟探测器
Indium Gallium Arsenide 砷化铟镓 ; 铟镓砷化物
GaInAs gallium indium arsenide 镓铟砷
gallium indium arsenide antimonide 镓铟砷锑
Dirk Grundler and his colleagues at Hamburg University in Germany have carried out extensive studies of EMR in indium arsenide-metal hybrid structures.
德国汉堡大学的昆德勒及其同事,也曾对砷化铟—属混合结构的EMR做过广泛的研究。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
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