...M)和光敏定位显微镜(photoactivated localization microscopy, PALM),均依赖于记录样品中单个分子的光发射(light emission)的能力。
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stray light emission 杂散光辐射
Relaxation accompanied with light emission 热载子能量释放
stimulated light emission 受激光发射
light emission characteristics 发光特性的
light emission decay 光子发射衰变
Organic Light Emission Diode 有机发光二极管 ; 有机电致发光
However, a-SiN_x films are regarded as ideal candidates for the study of PL in silicon-based compound due to its wide gap (about 5.3eV), strong light emission and lower barriers for electrons and holes than silicon oxide.
尽管如此,由于氮化硅是一种宽带隙半导体(带隙约为5.3eV),具有较强的光发射,并且比二氧化硅窄的带隙更有利于载流子注入,所以非晶SiN_x薄膜已经成为了研究硅基复合物发光的理想候选材料。
参考来源 - 磁控溅射法所沉积SiN·2,447,543篇论文数据,部分数据来源于NoteExpress
Chemiluminescence is the light emission produced in certain chemical reactions.
发光是在特定化学反应中产生的光辐射。
The thin film material has sharp red light emission spectra at a 616-619 nm position.
该薄膜材料在616 ~ 619纳米处存在尖锐的红光发射光谱。
The number of light emission spikes of discharge increases with the gas pressure increasing.
随气压的增加,放电的光信号脉冲数不断增加。
Absorption is just the opposite of emission, so instead of starting at a high energy level and dropping down, when we absorb light we start low and we absorb energy to bring ourselves up to an n final that's higher.
吸收就是发射的逆过程,与从一个高能量到低能量不同,当吸收光时,我们从低能量开始,吸收能量到一个更高的能量。
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