On this basis, the optimal process parameters combination are obtained.
在此基础上，获得了最佳的工艺参数组合。
Characterization method of defects in silicon carbide by chemical etching and optimal process parameters are obtained.
论文得到了用腐蚀法表征碳化硅材料缺陷的方法和优化的工艺参数。
It was found that a certain porosity of PS film to be widely used in MEMS technology can be obtained by selecting optimal process parameters.
研究发现，通过合理的选择工艺参数，可以制备具有特定孔隙率的多孔硅薄膜，可广泛的应用于微电子机械系统(MEMS)技术中。
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