All the ZnO:Ga films with the preferential orientation of（002）plane are polycrystalline and possess hexagonal wurtzite structure with their crystallographic c-axis perpendicular to the substrate. The grain size along the c-axis is found between 17 nm and 32 nm.2.
所制备的ZnO:Ga薄膜为具有(002)面单一择优取向的六角多晶纤锌矿结构且c轴垂直于衬底,薄膜沿c轴的晶粒尺寸在17-32nm之间。
参考来源 - 透明的高导电近红外反射ZnO：Ga薄膜的制备及特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation.
没有中间温度预退火过程的薄膜，显示出（100）择优取向；
This sample holder is placed at 25" to the X-ray beam and rotated at a rate of 1 rpm to avoid preferential orientation effects."
本样品储存器在X射线中放置25 秒，旋转的速度为每分钟1圈，以避免择优取向的影响。
The northern part of the region (to the right of the main image) displays linear features with a preferential northwest-southeast orientation.
本区域的北部(见主图像右侧)有呈西北-东南方向的线状地物。
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