A DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
参考来源 - SOI MOSFET的高频特性研究Near vaccum ultraviolet upconversion emission of Er3+ and Er3+-sensitized Gd3+ ions as well as their“super saturation effect”were experimentally observed in fluoride materials, which can be well explained by the proposed upconversion mechanisms.
观察到在氟化物中掺杂Er3+以及Er3+敏化Gd3+离子的近真空紫外上转换发光和超级饱和效应,提出并解释其发光机制。
参考来源 - 稀土氧化物和氟化物纳米晶上转换荧光光谱的设计研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The phenomena related to the saturation effect are discussed.
讨论了与饱和效应相联系的一些现象。
The competing processes and saturation effect on conversion efficiency have been analyzed.
对影响转换效率的有关竞争过程和饱和效应作了分析。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
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