Wide Band Gap 宽禁带 ; 带隙 ; 以几个宽频 ; 一种宽带隙
wide band-gap 宽能阶
wide band-gap semiconductor materials 宽带隙半导体材料
wide-band gap 宽带隙
direct wide band gap 直接能带
wide band-gap device 宽带隙器件
Wide-band gap material 宽禁带材料
wide band gap materials 宽带隙半导体材料
wide-band-gap semiconductors 宽带隙半导体
Light-emitting diodes constructed by one-dimensionalnanostructural ZnO and its composite materialsZinc oxide（ZnO）,as an important wide-band-gap semiconductor,hasbeen widely investigated for applications in light-emitting diodes（LEDs）,photovoltaic cells and lasers,because of its excellent photoelectricproperties.
氧化锌（ZnO），作为一种重要的宽禁带半导体材料，具有优良的光电性能，目前已被广泛地研究应用到发光二极管、光伏电池、激光等光电领域。
参考来源 - 一维纳米ZnO及其复合材料的发光二极管·2,447,543篇论文数据，部分数据来源于NoteExpress
The photonic band gap materials have wide potential applications in fabricating new type of optical devices.
光子晶体可以用来制备全新原理、高性能的光学器件，具有广阔的应用前景。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
The investigation results show that the band gap of the photonic crystal made of LHM is wide and multi-transmittance peaks appear in the forbidden band.
研究结果表明：一维右手材料和左手材料构成的光子晶体具有宽禁带的特点，禁带中出现多个共振透射峰。
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