vapor phase epitaxial growth 汽相外延生长
liquid phase epitaxial growth 液相外延生长 ; 液相取向附生
low pressure epitaxial growth 低压外延生长
pre epitaxial growth 外延前生长
Epitaxial Growth Process 外延生长过程 ; 外延晶膜生长 ; 外延生长进程 ; 晶膜生长
Epitaxial-Growth Mesa Transistor 晶膜生长台面晶体管
phase epitaxial growth technique 液相外延生长技术
epitaxial growth system 磊晶生长系统
vapor phase epitaxial growth system 汽相磊晶生长系统
The optimal melting temperature and time of the melt-epitaxial growth technics were clarified.
确定了熔融外延生长工艺的最佳熔融温度和熔融时间。
参考来源 - 无氟MOD法制备GdBCO高温超导薄膜研究At the present time, sapphire and SiC are the most prevailing substrate materials forⅢ-Ⅴsemiconductors (GaN, GaAS, etc. ) epitaxial growth.
蓝宝石和碳化硅等材料是当今主流的用于Ⅲ-Ⅴ价半导体(氮化镓、砷化镓等)外延生长的基体材料。
参考来源 - 高亮度LED晶圆紫外激光划片技术研究·2,447,543篇论文数据，部分数据来源于NoteExpress
BST thin films sol gel technique epitaxial growth electrical properties.
标签薄膜溶胶-凝胶工艺外延生长电性能。
Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
从外延形貌照片中观察到了外延生长台及生长螺线。
A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
本文提出了低-常压两步外延生长技术。
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