定义 中文名称: 铟砷磷 英文名称: indium arsenide phosphide 定义: 由砷化铟和磷化铟组成的固溶体。分子式为InxAs11xP。主要用于光电子器件。 应用学科: 材料科学技术(一级学科); 半导体材料(二级学科);
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gallium indium arsenide phosphide 镓铟砷磷
gallium indium arsenide phosphide GaInAsP 镓铟磷砷
indium gallium arsenide phosphide 磷化砷镓铟
indium arsenide phosphide
磷化砷化铟
以上为机器翻译结果,长、整句建议使用 人工翻译 。
Many optical components are typically constructed using materials such as gallium arsenide and indium phosphide.
WSJ: IBM Claims Breakthrough in Laser-Based Chips
Sol Voltaics uses data from its indium phosphide nanowire research to project that its gallium arsenide nanowires will deliver a 25% efficiency gain.
FORBES: A Swedish Solar Startup's Nanowires Promise To Deliver A Big Energy Boost
With its patented InGaP-Plus (Indium Gallium Phosphide) technology, Anadigics may have leapfrogged over its AlGaAs (Aluminum Gallium Arsenide) competitors by enabling some 20% to 25% longer cell phone battery life.
FORBES: Anadigics Powers Up
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