The diffraction peak of TiN(200) is the strongest and the preferred orientation is the most obvious when the cavity pressure is 0.5 Pa.
在腔体气压为0.5 Pa时出现的TiN(200)衍射峰最强、择优取向最明显。
参考来源 - 溅射气压对磁控溅射TiN薄膜光学性能的影响The results show that: (1) As sputtering power increasing, <111> crystal plane exhibits obvious preferred orientation, average grain size increases, resistively decreases, peeling strength of copper thin films increase. But as sputtering power overrun 7500W, peeling strength become decreasing.
研究表明:(1)随着溅射功率的增加,Cu薄膜<111>晶面表现出明显的择优取向生长,Cu膜平均晶粒尺寸增大,电阻率降低,剥离强度增大,但功率超过7500W后,剥离强度反而降低。
参考来源 - 卷绕直流磁控溅射法制备铜膜及其性能研究·2,447,543篇论文数据,部分数据来源于NoteExpress
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