The structure, which is fabricated on the SOI material, and its fabrication process have been designed based on the theoretical analysis.

传感器的结构建立在SOI材料上，在关键工艺中采用硅熔融键合技术。

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In order to improve the uniformity of the thin film of silicon, the interface of hetero-junction of SOI material was used as the interface of etch self-stopping.

为了提高电容式触觉传感阵列的性能，本工作以SOI材料中异质结界面作为深槽腐蚀中腐蚀自停止界面，以提高硅膜片的表面平整度和厚度均匀性。

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SOG material, as traditional SOI material, has much excellent electronics property, for example, SOG circuit has the advantage of high switch speed, high density, low voltage, low power and so on.

SOG材料与传统SOI材料一样，拥有许多优良的电学性能，例如SOG电路具有高开关速度、高密度、低压和低功耗等优点。

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