tuned substrate self-bias 基片调谐自偏压
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
鞘层电容的非线性变化导致了基片偏压的非线性变化。
Not long ago, a new phenomenon that there was bistate, jumped delay in tuned substrate self-bias was found for the first time in an experiment, and researched in detail.
在以前的实验中，首次发现了基片调谐偏压的跳变、双稳回滞现象，并且对此进行了详细的研究。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
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