Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
研究MTJ样品的隧道结磁电阻(TMR)效应。
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