Schottky Barrier Diode-SBD 肖特基二极管
gan schottky barrier diode gan肖特基势垒二极管
schottky-barrier diode rectifier 肖特基势垒二极管整流器
GaAs Schottky Barrier Diode GaAs肖特基势垒二极管
InP schottky barrier diode InP肖特基二极管
SiC-Based Schottky Barrier Diode SiC肖特基势垒二极管
schottky barrier double rectifier diode 萧特基势垒双整流二极管
Junction Barrier schottky diode 结势垒肖特基二极管
The characteristics at the metal/Si interface are similar to that of Schottky barrier diode. Thermionic emission and quantum tunneling are the main current conduction mechanism.
源漏区肖特基接触界面的特性和常规肖特基二极管相似，电流的输运主要以热电子发射和隧道效应为主。
参考来源 - 硅肖特基源漏MOSFET的模拟研究Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
参考来源 - 薄硅外延片的生长及高频肖特基二极管的研制·2,447,543篇论文数据，部分数据来源于NoteExpress
Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
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