All samples were prepared by rf magnetron sputtering method.
所有样品采用射频辅助磁控溅射方法制备。
The kinetic process of reactive magnetron sputtering has been studied.
研究了反应磁控溅射的动力学过程。
The glass thin film for optical waveguides is deposited by the magnetron sputtering?
采用磁控射频溅射法制备光波导用玻璃薄膜。
Thin film manganin gages and ytterbium gages were fabricated by magnetron sputtering.
采用磁控溅射法制备锰铜薄膜，溅射和真空蒸发法制备镱薄膜。
Reactive magnetron sputtering was used to prepare many kinds of compound films extensively.
反应磁控溅射被广泛应用于制备化合物薄膜。
Magnetron sputtering has become one of the most important methods for depositing thin films.
磁控溅射已经成为沉积薄膜的最重要的方法之一。
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
The power supply will be convenient for controlling the magnetron sputtering coater automatically.
该电源为磁控溅射镀膜设备实现自动控制提供了方便。
Arc ion plating or magnetron sputtering provides the best application condition for pulse technique.
电弧或溅射离子镀高的离化率为脉冲工艺提供了最好的应用条件。
A new rotating cylindric magnetron sputtering is presented and successfully pro - duced by ourselves.
提出并研制成功了一种新型旋转圆柱形磁控溅射器。
An alternative current medium frequency pulsed magnetron sputtering cathode power supply was introduced.
本文介绍了一种中频交流脉冲式磁控溅射靶极电源。
Niobium oxide optical thin films have been prepared by low frequency reactive magnetron sputtering system.
利用低频反应磁控溅射制备五氧化二铌光学薄膜。
The thickness uniformity of films deposited by planar magnetron sputtering target was analyzed theoretically.
从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性。
ABSTRACT the application of pulse technique on arc ion plating and magnetron sputtering is summarized in the article.
摘要本文综述了国内外脉冲工艺在电弧离子镀和磁控溅射中的应用。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
Aluminum film on uranium is prepared using magnetron sputtering with and without circulated argon ion bombardment process.
以磁控溅射沉积方法，采用循环氩离子轰击镀和未循环轰击镀工艺在金属铀上制备了铝薄膜。
High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature.
本文论述了在空心微珠表面磁控溅射镀金属薄膜的方法。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。
Metallic antimony thin film was deposited by magnetron sputtering and it was investigated as anode materials for lithium-ion batteries.
采用磁控溅射方法制备金属锑薄膜，并把它作为锂离子二次电池负极进行研究。
ITO thin films were prepared by radio-frequency magnetron sputtering technique at different sputtering power, and applied to HIT solar cells.
采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜，并将其应用于HIT太阳电池。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
The technology of magnetron sputtering is an important method of preparing new materials in modern times, especially in the process of preparation of films.
磁控溅射技术是现代材料制备的重要方法之一，特别是在薄膜的制备过程中显得更为重要。
Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor.
在金属膜电阻器的生产过程中，靶材是非常关键的，它制约著金属膜电阻器的精度、可靠性、 电阻温度系数等性能。
Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor.
在金属膜电阻器的生产过程中，靶材是非常关键的，它制约著金属膜电阻器的精度、可靠性、 电阻温度系数等性能。
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