NOR flash memory can typically be programmed a byte at a time, whereas NAND flash memory must be programmed in multi-byte bursts (typically, 512 bytes).
NOR flash内存通常一次可以编写一个字节，而NAND flash内存必须编写多个字节(通常为512字节)。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
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