The nitride semiconductor light-emitting device has improved light extraction efficiency.
该氮化物半导体发光器件具有改善了的光取出效率。
Therefore the quality and productivity of the semiconductor light-emitting device (100) having a reflecting layer (10) for improving the luminous efficiency can be significantly improved.
这样可大幅度提高为提高发光效率设置了反射层10的半导体发光元件100的质量和生产性。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
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